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FDMC2523P
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
FDMC2523P P-Channel MOSFET, 1.8 A, 150 V QFET, 8-Pin MLP ON Semiconductor
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Inventory: 4526
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.27774
≥1 USD $0.27774
≥10 USD $0.26202
≥100 USD $0.24719
≥500 USD $0.2332
≥1000 USD $0.22
≥3000 USD $0.20755
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 210mg
Transistor Element Material SILICON
Dimensions
Height 800μm
Length 3mm
Width 3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series QFET?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 1.5Ohm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory Other Transistors
Voltage - Rated DC -150V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Current Rating -3A
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 42W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 11 ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 3.8V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage -150V
Max Junction Temperature (Tj) 150°C
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