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CSD16404Q5A
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 81A 8-SON
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Inventory: 8393
Minimum: 1
Total Price: USD $6.91
Unit Price: USD $6.91315
≥1 USD $6.91315
≥10 USD $5.67245
≥100 USD $5.4948
≥500 USD $5.31715
≥1000 USD $5.14045
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Termination SMD/SMT
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD16404
Pin Count 8
Number of Elements 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 7.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.1m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 21A Ta 81A Tc
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Rise Time 13.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +16V, -12V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 8.4 ns
Continuous Drain Current (ID) 81A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0072Ohm
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Nominal Vgs 1.8 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Dimensions
Length 4.9mm
Width 6mm
Thickness 1mm
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