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STW11NM80
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 11A TO-247
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Inventory: 8326
Minimum: 1
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 20.15mm
Length 15.75mm
Width 5.15mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tube
Series MDmesh?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 400mOhm
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 11A
Base Part Number STW11N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 43.6nC @ 10V
Rise Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 5.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 400 mJ
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