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Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 195A TO-247AC
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Inventory: 973
Minimum: 1
Total Price: USD $3.32
Unit Price: USD $3.31835
≥1 USD $3.31835
≥10 USD $2.7227
≥100 USD $2.63815
≥500 USD $2.55265
≥1000 USD $2.46715
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.7MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 380W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 59 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8920pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Rise Time 370 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 190 ns
Turn-Off Delay Time 160 ns
Continuous Drain Current (ID) 350A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 290 mJ
Recovery Time 130 ns
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