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IRFP3077PBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 120A TO-247AC
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Inventory: 6387
Minimum: 1
Total Price: USD $9.12
Unit Price: USD $9.12475
≥1 USD $9.12475
≥10 USD $7.48695
≥100 USD $7.25325
≥500 USD $7.0186
≥1000 USD $6.7849
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 3.3MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 340W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 340W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 76 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 77 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 200A
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 850A
Dual Supply Voltage 75V
Avalanche Energy Rating (Eas) 200 mJ
Recovery Time 63 ns
Nominal Vgs 4 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.3086mm
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