Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series HEXFET?, StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 341W Tc
Element Configuration Single
Power Dissipation 341W
Turn On Delay Time 52 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13703pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 411nC @ 10V
Rise Time 141ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 104 ns
Turn-Off Delay Time 172 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 20V