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FDA59N25

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 59A TO-3P
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Inventory: 6295
Minimum: 1
Total Price: USD $5.91
Unit Price: USD $5.9071
≥1 USD $5.9071
≥10 USD $4.8469
≥100 USD $4.6949
≥500 USD $4.54385
≥1000 USD $4.3928

Technical Details

Supply Chain

Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 392W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 392W
Turn On Delay Time 70 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 29.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 480 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 170 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 59A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.049Ohm
Drain to Source Breakdown Voltage 250V
Nominal Vgs 5 V

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