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FDP51N25

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 51A TO-220
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Inventory: 3265
Minimum: 1
Total Price: USD $6.71
Unit Price: USD $6.7127
≥1 USD $6.7127
≥10 USD $5.5081
≥100 USD $5.3352
≥500 USD $5.16325
≥1000 USD $4.9913

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON

Dimensions

Height 9.4mm
Length 10.67mm
Width 4.83mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 60MOhm
Terminal Finish Tin (Sn)
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 320W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 320W
Turn On Delay Time 62 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3410pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 465 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 51A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 204A

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