Operating Temperature -55?°C~175?°C TJ
Packaging Tube
Published 2001
Series QFET?ū
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 70MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -17A
Number of Elements 1
Power Dissipation-Max 47W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 47W
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m ?? @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250??A
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25?°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 185 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ??25V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 17A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 68A
Avalanche Energy Rating (Eas) 560 mJ