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ZVN4206GTA
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 1A SOT223
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Inventory: 1760
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Dimensions
Height 1.65mm
Length 6.7mm
Width 3.7mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1Ohm
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 8A
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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