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CSD18509Q5BT
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
TEXAS INSTRUMENTS CSD18509Q5BTMOSFET Transistor, N Channel, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
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Inventory: 7811
Minimum: 1
Total Price: USD $1.95
Unit Price: USD $1.948156
≥1 USD $1.948156
≥10 USD $1.837884
≥100 USD $1.73386
≥500 USD $1.63571
≥1000 USD $1.543126
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18509
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 195W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13900pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 345 mJ
Feedback Cap-Max (Crss) 354 pF
Physical
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 24.012046mg
Transistor Element Material SILICON
Dimensions
Length 5mm
Width 6mm
Thickness 950μm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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