Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4.9Ohm
Subcategory Other Transistors
Voltage - Rated DC -500V
Technology MOSFET (Metal Oxide)
Current Rating -2.7A
Number of Elements 1
Power Dissipation-Max 85W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 85W
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.9 Ω @ 1.35A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 56 ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 2.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -500V
Dual Supply Voltage -500V
Avalanche Energy Rating (Eas) 250 mJ
Nominal Vgs -5 V