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IRF510SPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 5.6A D2PAK
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Inventory: 8385
Minimum: 1
Total Price: USD $0.22
Unit Price: USD $0.22135
≥1 USD $0.22135
≥10 USD $0.1824
≥100 USD $0.1767
≥500 USD $0.171
≥1000 USD $0.1653
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 540mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 43W Tc
Element Configuration Single
Power Dissipation 3.7W
Turn On Delay Time 6.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.6A Tc
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 5.6A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 180pF
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ
Nominal Vgs 4 V
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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