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2N7000-G
Microchip TechnologyRoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET,N-CHANNEL ENHANCEMENT MODE,60V,5 Ohm3 TO-92BAG
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Inventory: 2819
Minimum: 1
Total Price: USD $1.94
Unit Price: USD $1.9361
≥1 USD $1.9361
≥500 USD $1.5884
≥1000 USD $1.539
≥2000 USD $1.4896
≥5000 USD $1.4402
≥10000 USD $1.29105
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 200mA
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Tj
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±30V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF
Dimensions
Height 5.334mm
Length 5.21mm
Width 4.19mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
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