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CSD19538Q3AT
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 15A VSONP
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Inventory: 6342
Minimum: 1
Total Price: USD $0.64
Unit Price: USD $0.637749
≥1 USD $0.637749
≥10 USD $0.601655
≥100 USD $0.567599
≥500 USD $0.535466
≥1000 USD $0.505153
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Length 3.3mm
Width 3.3mm
Thickness 800μm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19538
Number of Elements 1
Power Dissipation-Max 2.8W Ta 23W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 59m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 454pF @ 50V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 15A
Threshold Voltage 3.2V
Drain Current-Max (Abs) (ID) 4.9A
Drain-source On Resistance-Max 0.072Ohm
Pulsed Drain Current-Max (IDM) 37A
DS Breakdown Voltage-Min 100V
Feedback Cap-Max (Crss) 16.4 pF
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