Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1999
Series SIPMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 800m Ω @ 1.17A, 10V
Vgs(th) (Max) @ Id 2V @ 160μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.17A Ta
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 1.17A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -60V
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage -60V
Dual Supply Voltage -60V
Recovery Time 46 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1.5 V