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PMPB20EN,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage 6-UDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 7.2A 6DFN
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Inventory: 6868
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.7W Ta 12.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19.5m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7.2A Ta
Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 7.2A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0245Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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