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DMN2300UFB-7B

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 3-UFDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 1.32A 3DFN
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Inventory: 2310
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.1102
≥1 USD $0.1102
≥10 USD $0.0912
≥100 USD $0.08835
≥500 USD $0.0855
≥1000 USD $0.08265

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 468mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4.92 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 67.62pF @ 20V
Current - Continuous Drain (Id) @ 25°C 1.32A Ta
Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V
Rise Time 6.93ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 10.62 ns
Turn-Off Delay Time 21.71 ns
Continuous Drain Current (ID) 1.78A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V

Supply Chain

Factory Lead Time 17 Weeks

Alternative Model

IRF1404STRRPBF
Infineon Technologies

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