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FCD360N65S3R0
ON SemiconductorRoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
SUPERFET3 650V DPAK
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Inventory: 7755
Minimum: 1
Total Price: USD $2.27
Unit Price: USD $2.272444
≥1 USD $2.272444
≥10 USD $2.143815
≥100 USD $2.022474
≥500 USD $1.90799
≥1000 USD $1.799985
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperFET? III
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 400V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 10A
Drain-source On Resistance-Max 0.36Ohm
Pulsed Drain Current-Max (IDM) 25A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 40 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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