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SI4636DY-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 30V 17A 4.4W 8.5mohm @ 10V
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Inventory: 3446
Minimum: 1
Total Price: USD $10.56
Unit Price: USD $10.5602
≥1 USD $10.5602
≥10 USD $8.66495
≥100 USD $8.3942
≥500 USD $8.12345
≥1000 USD $7.8527
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 4.4W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2635pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 87ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 12.7A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 20 mJ
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