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STD20NF06LT4
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 24A DPAK
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Inventory: 144
Minimum: 1
Total Price: USD $1.99
Unit Price: USD $1.990843
≥1 USD $1.990843
≥10 USD $1.878156
≥100 USD $1.771843
≥500 USD $1.671557
≥1000 USD $1.576932
Technical Details
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET? II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 40mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 24A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD20N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±18V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 18V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 96A
Nominal Vgs 2.5 V
Dimensions
Height 2.4mm
Length 6.6mm
Width 6.2mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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