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FDD5N60NZTM
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Channel 600V 4A
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Inventory: 3540
Minimum: 1
Total Price: USD $0.94
Unit Price: USD $0.9405
≥1 USD $0.9405
≥10 USD $0.7714
≥100 USD $0.74765
≥500 USD $0.72295
≥1000 USD $0.6992
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Dimensions
Height 2.39mm
Length 6.73mm
Width 6.22mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series UniFET-II?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 2Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 4A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 600V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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