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FDS8817NZ
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R
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Inventory: 5750
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.11685
≥1 USD $0.11685
≥500 USD $0.09595
≥1000 USD $0.0931
≥2000 USD $0.0893
≥5000 USD $0.08645
≥10000 USD $0.0779
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 13 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.8 V
Feedback Cap-Max (Crss) 300 pF
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON
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