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BUK9Y25-80E,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
BUK9Y25-80E - N-channel 80 V, 27 mO logic level MOSFET in LFPAK56
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Pricing & Ordering
Inventory: 6597
Minimum: 1
Total Price: USD $1.02
Unit Price: USD $1.0203
≥1 USD $1.0203
≥10 USD $0.8379
≥100 USD $0.8113
≥500 USD $0.78565
≥1000 USD $0.75905
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Dimensions
Diameter 12.7 mm
Height 15.875mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Color Black
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 95W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 10A, 5V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2703pF @ 25V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 17.1nC @ 5V
Rise Time 17.2 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 15.3 ns
Turn-Off Delay Time 23.9 ns
Continuous Drain Current (ID) 37A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.027Ohm
Drain to Source Breakdown Voltage 80V
Compliance
RoHS Status ROHS3 Compliant
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