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STB141NF55
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A D2PAK
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Inventory: 4268
Minimum: 1
Total Price: USD $17.45
Unit Price: USD $17.4515
≥1 USD $17.4515
≥10 USD $14.31935
≥100 USD $13.8719
≥500 USD $13.42445
≥1000 USD $12.977
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET? II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STB141N
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V
Rise Time 150ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 125 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 55V
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