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PHP20N06T,127
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 20.3A TO220AB
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Inventory: 3922
Minimum: 1
Total Price: USD $6.47
Unit Price: USD $6.47045
≥1 USD $6.47045
≥10 USD $5.30955
≥100 USD $5.1433
≥500 USD $4.978
≥1000 USD $4.81175
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 9.4mm
Length 10.3mm
Width 4.7mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 62W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 62W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 483pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.3A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 81A
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