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IRFR9110PBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 100V 3.1A 3-Pin(2+Tab) DPAK
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Inventory: 7102
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Weight 1.437803g

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -3.1A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 25W Tc
Element Configuration Single
Power Dissipation 25W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.1A Tc
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) -3.1A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 200pF
Recovery Time 160 ns
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω

Dimensions

Height 2.39mm
Length 6.73mm
Width 6.22mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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