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IRF7403TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8.5A 8-SOIC
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Inventory: 4170
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.82745
≥1 USD $0.82745
≥10 USD $0.67925
≥100 USD $0.6574
≥500 USD $0.6365
≥1000 USD $0.6156
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 22mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 8.5A
Number of Elements 1
Row Spacing 6.3 mm
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.5A Ta
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Rise Time 37 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 8.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.7A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 78 ns
Nominal Vgs 1 V
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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