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IRF9520NPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
INFINEON IRF9520NPBF MOSFET Transistor, P Channel, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
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Inventory: 3155
Minimum: 1
Total Price: USD $0.49
Unit Price: USD $0.49101
≥1 USD $0.49101
≥10 USD $0.46322
≥100 USD $0.437
≥500 USD $0.41226
≥1000 USD $0.38893
≥3000 USD $0.36691
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Dimensions
Height 15.24mm
Length 10.54mm
Width 4.69mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Packaging Tube
Published 1998
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 480mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 48W
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating -6.8A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.54mm
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 47 ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) -6.8A
Threshold Voltage -4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 27A
Dual Supply Voltage -100V
Recovery Time 150 ns
Nominal Vgs -4 V
Alternative Model
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