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IPA65R1K0CEXKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V TO220-3
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Inventory: 3258
Minimum: 1
Total Price: USD $0.78
Unit Price: USD $0.780282
≥1 USD $0.780282
≥10 USD $0.736119
≥100 USD $0.694448
≥500 USD $0.65514
≥1000 USD $0.618058
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 328pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.2A Tc
Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 7.2A
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 50 mJ
FET Feature Super Junction
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
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