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STB6N80K5
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET POWER MOSFET
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Inventory: 977
Minimum: 1
Total Price: USD $33.18
Unit Price: USD $33.1797
≥1 USD $33.1797
≥10 USD $27.22415
≥100 USD $26.3739
≥500 USD $25.5227
≥1000 USD $24.67245
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 3.949996g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SuperMESH5?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STB6N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 85W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 255pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 85 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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