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BSC097N06NSATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 46A TDSON-8
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Inventory: 1629
Minimum: 1
Total Price: USD $0.94
Unit Price: USD $0.942231
≥1 USD $0.942231
≥10 USD $0.888899
≥100 USD $0.83859
≥500 USD $0.791114
≥1000 USD $0.746338
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 36W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.7m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 3.3V @ 14μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1075pF @ 30V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 2 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 46A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0097Ohm
Avalanche Energy Rating (Eas) 13 mJ
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