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STW26NM60ND
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 21A TO247
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Inventory: 4062
Minimum: 1
Total Price: USD $1.61
Unit Price: USD $1.608697
≥1 USD $1.608697
≥10 USD $1.517629
≥100 USD $1.431739
≥500 USD $1.350692
≥1000 USD $1.274241
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Dimensions
Height 20.15mm
Length 15.75mm
Width 5.15mm
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh? II
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STW26N
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1817pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 54.6nC @ 10V
Rise Time 14.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 27.5 ns
Turn-Off Delay Time 69 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 84A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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