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STP24N60DM2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube
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Inventory: 2450
Minimum: 1
Total Price: USD $1.19
Unit Price: USD $1.19034
≥1 USD $1.19034
≥10 USD $1.12296
≥100 USD $1.05939
≥500 USD $0.99943
≥1000 USD $0.94286
≥3000 USD $0.88949

Technical Details

Supply Chain

Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series FDmesh? II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP24N
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1055pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 8.7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 72A

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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