Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
IRL630SPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 9A D2PAK
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 4654
Minimum: 1
Total Price: USD $52.73
Unit Price: USD $52.72785
≥1 USD $52.72785
≥10 USD $43.26395
≥100 USD $41.9121
≥500 USD $40.56025
≥1000 USD $39.2084
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 400mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 74W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 57ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 10V
Input Capacitance 1.1nF
Recovery Time 340 ns
Drain to Source Resistance 400mOhm
Rds On Max 400 mΩ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You