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IPP65R310CFDXKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Single N-Channel 650 V 310 mOhm 41 nC CoolMOS? Power Mosfet - TO-220-3
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Inventory: 8496
Minimum: 1
Total Price: USD $10.82
Unit Price: USD $10.824616
≥1 USD $10.824616
≥10 USD $10.211905
≥100 USD $9.63388
≥500 USD $9.088559
≥1000 USD $8.574113

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 104.2W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 310m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 440μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11.4A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 7.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 11.4A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Avalanche Energy Rating (Eas) 290 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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