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SPP08N80C3XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 8A TO-220AB
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Inventory: 9279
Minimum: 1
Total Price: USD $25.97
Unit Price: USD $25.966083
≥1 USD $25.966083
≥10 USD $24.496302
≥100 USD $23.109723
≥500 USD $21.801621
≥1000 USD $20.567569
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 104W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 5.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 470μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.65Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 340 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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