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IPA90R800C3XKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 900V 6.9A TO220-3
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Inventory: 2270
Minimum: 1
Total Price: USD $5.12
Unit Price: USD $5.120746
≥1 USD $5.120746
≥10 USD $4.830896
≥100 USD $4.557447
≥500 USD $4.299481
≥1000 USD $4.056109

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 33W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 460μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.9A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 6.9A
Drain-source On Resistance-Max 0.8Ohm
Pulsed Drain Current-Max (IDM) 15A
DS Breakdown Voltage-Min 900V
Avalanche Energy Rating (Eas) 157 mJ

Alternative Model

STD12N65M2
STMicroelectronics

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