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SPP07N60C3XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 7.3A TO-220AB
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Inventory: 933
Minimum: 1
Total Price: USD $1.11
Unit Price: USD $1.10675
≥1 USD $1.10675
≥10 USD $0.9082
≥100 USD $0.8797
≥500 USD $0.8512
≥1000 USD $0.8227
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3-1
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating 7.3A
Power Dissipation-Max 83W Tc
Power Dissipation 83W
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 3.5ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 650V
Input Capacitance 790pF
Drain to Source Resistance 600mOhm
Rds On Max 600 mΩ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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