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FQPF2N60C

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 2A TO-220F
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Inventory: 230
Minimum: 1
Total Price: USD $0.2
Unit Price: USD $0.204445
≥1 USD $0.204445
≥10 USD $0.192874
≥100 USD $0.181957
≥500 USD $0.171656
≥1000 USD $0.16194

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 9 hours ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4.7Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 2A
Number of Elements 1
Power Dissipation-Max 23W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 23W
Case Connection ISOLATED
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 8A

Dimensions

Height 9.19mm
Length 10.16mm
Width 4.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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