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IRFP150MPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 42A TO-247AC
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Inventory: 6482
Minimum: 1
Total Price: USD $0.77
Unit Price: USD $0.77425
≥1 USD $0.77425
≥10 USD $0.63555
≥100 USD $0.6156
≥500 USD $0.59565
≥1000 USD $0.5757

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 36MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 56 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 140A
Avalanche Energy Rating (Eas) 420 mJ
Nominal Vgs 4 V

Dimensions

Height 21.1mm
Length 16.129mm
Width 4.826mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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