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IRF630SPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 9A D2PAK
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Inventory: 3391
Minimum: 1
Total Price: USD $0.32
Unit Price: USD $0.3192
≥1 USD $0.3192
≥10 USD $0.2622
≥100 USD $0.25365
≥500 USD $0.24605
≥1000 USD $0.2375
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK (TO-263)
Weight 1.437803g
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 400MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta 74W Tc
Element Configuration Single
Power Dissipation 3W
Turn On Delay Time 9.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 800pF
Drain to Source Resistance 400mOhm
Rds On Max 400 mΩ
Nominal Vgs 4 V
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