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FQPF30N06L
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 60V N-Channel QFET Logic Level
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Inventory: 8310
Minimum: 1
Total Price: USD $0.44
Unit Price: USD $0.4427
≥1 USD $0.4427
≥10 USD $0.36385
≥100 USD $0.35245
≥500 USD $0.34105
≥1000 USD $0.32965
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Dimensions
Height 16.07mm
Length 10.36mm
Width 4.9mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 22.5A
Number of Elements 1
Power Dissipation-Max 38W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection ISOLATED
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22.5A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 210 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 22.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 90A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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