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IRF9630SPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
In a Pack of 5, P-Channel MOSFET, 6.5 A, 200 V, 3-Pin D2PAK Vishay IRF9630SPBF
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Inventory: 3469
Minimum: 1
Total Price: USD $1.87
Unit Price: USD $1.87245
≥1 USD $1.87245
≥10 USD $1.53615
≥100 USD $1.48865
≥500 USD $1.4402
≥1000 USD $1.3927
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta 74W Tc
Element Configuration Single
Power Dissipation 3W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 800mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Input Capacitance 700pF
Drain to Source Resistance 300mOhm
Rds On Max 800 mΩ
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.02mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
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