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IPP60R180P7XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N-Channel 650 V 180 mOhm 25 nC CoolMOS? Power Mosfet - TO-220
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Inventory: 968
Minimum: 1
Total Price: USD $10.19
Unit Price: USD $10.191716
≥1 USD $10.191716
≥10 USD $9.614829
≥100 USD $9.070598
≥500 USD $8.557167
≥1000 USD $8.072796
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS? P7
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 72W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 1081pF @ 400V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.18Ohm
Pulsed Drain Current-Max (IDM) 53A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 56 mJ
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Alternative Model
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