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Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 81A TO-247AC
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Inventory: 3642
Minimum: 1
Total Price: USD $2.07
Unit Price: USD $2.07385
≥1 USD $2.07385
≥10 USD $1.7024
≥100 USD $1.6492
≥500 USD $1.596
≥1000 USD $1.5428
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 1997
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 12mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 72A
Lead Pitch 5.45mm
Number of Elements 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 81A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 66 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 81A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 290A
Dual Supply Voltage 55V
Recovery Time 120 ns
Nominal Vgs 4 V
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