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IRFB4019PBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 17A TO-220AB
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Inventory: 1444
Minimum: 1
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 95MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80mW
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 95m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 13 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.8 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 4.9V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Recovery Time 96 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4.9 V
Dimensions
Height 19.8mm
Length 10.6426mm
Width 4.82mm
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