Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 21MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 52.4A
Number of Elements 1
Power Dissipation-Max 121W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 121W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 26.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52.4A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 380 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 145 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 52A
Threshold Voltage 2.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 990 mJ