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2N4123RLRM
Rochester Electronics, LLCRoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
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Pricing & Ordering
Inventory: 3901
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.145206
≥1 USD $0.145206
≥10 USD $0.136981
≥100 USD $0.12923
≥500 USD $0.12191
≥1000 USD $0.115015
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code 8541.21.00.75
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 2mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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