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ZXTP19060CZTA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-243AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description TRANS PNP 60V 4.5A SOT89
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Inventory: 8345
Minimum: 1
Total Price: USD $3.66
Unit Price: USD $3.65845
≥1 USD $3.65845
≥10 USD $3.002
≥100 USD $2.90795
≥500 USD $2.81485
≥1000 USD $2.7208

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 4.46W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 180MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTP19060C
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 4.46W
Case Connection COLLECTOR
Power - Max 2.4W
Transistor Application SWITCHING
Gain Bandwidth Product 180MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 410mV @ 450mA, 4.5A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 180MHz
Collector Emitter Saturation Voltage -410mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.6mm
Length 4.6mm
Width 2.6mm

Alternative Model

RN2110,LF(CT
Toshiba Semiconductor and Storage

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